preliminary data sheet ?1996 ixys corporation. all rights reserved. 95586(7/96) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 3.0 ma, v ge = 0 v 1200 v v ge(th) i c = 1.5 ma, v ce = v ge 48v i ces v ce = 0.8 v ces , v ge = 0 v t j = 25c 200 a note 2 t j = 125c 1 ma i ges v ce = 0 v, v ge = 20 v + 100 na v ce(sat) i c = i c90 , v ge = 15 v 4.0 v i c25 = 30 a v ces = 1200 v v ce(sat) = 4.0 v ixsh15N120A igbt "s" series - improved scsoa capability symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c; r ge = 1 m w 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 30 a i c90 t c = 90c 15 a i cm t c = 25c, 1 ms 60 a ssoa v ge = 15 v, t j = 125c, r g = 82 w i cm = 30 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces t sc t j = 125oc, v ce = 720 v; v ge = 15v, r g = 82 w 5s p c t c = 25c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.15/10 nm/lb-in. . weight 6g max. lead temperature for 300 c soldering (1.6mm from case for 10s) features ? 2 nd generation hdmos tm process low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? uninterruptible power supplies (ups) ? switched-mode and resonant-mode power supplies ? dc choppers advantages ? easy to mount (isolated mounting hole) ? reduces assembly time and cost g e c to-247ad
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixsh15N120A data contained herein reflects measurements and characterization data from engineering lots. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min typ. max. to-247ad (ixsh) g fs i c = i c90 , v ce = 10 v, 6 7 s pulse test, t < 300 s, duty cycle < 2 % i c(on) v ge = 15v, v ce = 10 v 65 a c ies v ce = 25 v, v ge = 0 v, f = 1 mhz 1800 pf c oes 160 pf c res 45 pf q g i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 75 nc q ge 20 nc q gc 35 nc t d(on) inductive load, t j = 25c 100 ns t ri i c = i c90 , v ge = 15 v, l = 100h 200 ns t d(off) r g = 82 w , vclamp = 0.8 v ces 450 ns t fi note 1 600 ns e off 5.4 mj t d(on) inductive load, t j = 125c 100 ns t ri i c = i c90, v ge = 15 v, l = 100h 200 ns e (on) r g = 82 w 1.1 mj t d(off) v clamp = 0.8 v ces 650 ns t fi note 1 900 ns e off 14.5 mj r thjc 0.83 k/w r thck 0.25 k/w notes: 1.) switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or r g values. 2.) device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
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